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Processing
Equipment Baseline
Process Support Team
Processing Fundamentals
Doping Process
Etching Process
Lithography
Metrology
Substrate Cleaning
Thermal Processing
Thin Film
Dielectrics Deposition (non-thermal)
Metal Deposition Process
Thermal Growth
Gate Oxide
Oxidation
Poly-Silicon
Semi Insulating Polycrystalline Silicon
Thermal Nitride
Thermal Oxide
Processing Information
Recipe Library
Poly-Silicon
Temperature (°C)
Temperature (°C)
580 - 650 (Lower Temperature, Lower Stress)
Amorphous Silicon Temperature Lower than 570
Pressure (mTorr)
200 - 400
Gas (sccm)
SiH
4
: 50 - 100 Polysilicon
SiH
4
: 50 - 100 PH3 2-4 sccm (Increase PH3 Lower Resistivity)
SiH
4
: 20 - 50 for Amorphous Silicon
Refractive Index
4.0
Rate (Å/min)
50 - 100 (Lower T/P, Lower Dep. Rate)
Rate (Å/min)
20 - 40 (for Amorphous Silicon)
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