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Processing
Equipment Baseline
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Processing Fundamentals
Doping Process
Etching Process
Dielectrics Etch
Metal Etching
Polymer Etch
Photoresist
Polyimide
Semiconductor Etch
Lithography
Metrology
Substrate Cleaning
Thermal Processing
Thin Film
Processing Information
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Photoresist
Plasma-Therm RIE
Temperature:
25 °C
Gases:
O
2
- 10 sccm He - 10 sccm
Pressure:
10 mTorr
Power:
200 W
Etch Rate:
1000 Å/min
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