IMS- Micro/Nano Fabrication Facility
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Plasma-Therm ICP

Temperature:
25 °C
Gases:
Step 1
Step 2
O2
10 sccm
6 sccm
Cl2
20 sccm
24 sccm
Pressure:
10 mTorr
10 mTorr
Power RF:
25 W
10 W
Power ICP:
600 W
500 W
Time:
20 sec
Endpoint

Plasma-Therm RIE

Temperature:
25 °C
Gases:
Cl2 - 40 sccm O2 - 10 sccm
Pressure:
75 mTorr
Power:
55 W
DC-bias:
50 V
Etch Rate:
100-200 Å/min
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