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Processing
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Etching Process
Dielectrics Etch
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Isotropic
Plasma-Therm RIE
Temperature:
25 °C
Gases:
O
2
- 40 sccm CF
4
- 10 sccm
Pressure:
200 mTorr
Power:
250 W
Etch Rate:
5000 Å/min
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