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Processing
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Etching Process
Dielectrics Etch
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Chrome
Plasma-Therm ICP
Temperature:
25 °C
Gases:
Step 1
Step 2
O
2
10 sccm
6 sccm
Cl
2
20 sccm
24 sccm
Pressure:
10 mTorr
10 mTorr
Power RF:
25 W
10 W
Power ICP:
600 W
500 W
Time:
20 sec
Endpoint
Plasma-Therm RIE
Temperature:
25 °C
Gases:
Cl
2
- 40 sccm O
2
- 10 sccm
Pressure:
75 mTorr
Power:
55 W
DC-bias:
50 V
Etch Rate:
100-200 Å/min
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