Stoichiometric and Low Stress Silicon Nitride
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Equipment
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Tystar Furnace
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Temperature (°C)
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780 - 880 (Higher Temperature, Lower Stress)
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Pressure (mTorr)
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200 - 400
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Gas 1 (sccm) 1:3 ratio (Stoichiometric)
Gas 1 (sccm) 4:1 ratio (Low stress Tensile)
Gas 1 (sccm) 5:1 ratio (Low Stress)
Gas 1 (sccm) 6:1 ratio (Zero Stress or Compressive)
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SiH2Cl2 - 33
SiH2Cl2 - 100
SiH2Cl2 - 100
SiH2Cl2 - 100
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Gas 2 (sccm) 1:3 ratio (Stoichiometric)
Gas 2 (sccm) 4:1 ratio (Low stress Tensile)
Gas 2 (sccm) 5:1 ratio (Low Stress)
Gas 2 (sccm) 6:1 ratio (Zero Stress or Compressive)
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NH3 - 100
NH3 - 25
NH3 - 20
NH3 - 16
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Refractive Index 1:3 ratio (Stoichiometric)
Refractive Index 4:1 ratio (Low stress Tensile)
Refractive Index 5:1 ratio (Low Stress)
Refractive Index 6:1 ratio (Zero Stress or Compressive)
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2.0
2.1
2.2
2.3
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Deposition Rate (Å/min)
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30 - 60
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