IMS- Micro/Nano Fabrication Facility
Silicon Carbide

Unaxis PECVD

Temperature:
300 °C
Gases:
SiH4 (5% in He) - 300 sccm
He - 700 sccm CH4 - 100 sccm
Pressure:
900 mTorr
Power:
50 W
Deposition Rate:
50 Å/min
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