IMS- Micro/Nano Fabrication Facility
Silicon

Plasma-Therm RIE

Trench Etch - Fluorine
Temperature:
25 °C
Gases:
SF6 - 25 sccm
O2 - 25 sccm
Pressure:
100 mTorr
Power:
180 W
DC-bias:
150 V
Etch Rate:
5000 - 7500 Å/min

 

Trench Etch - Chlorine
Temperature:
40 °C
Gases:
SiCl4 - 30 sccm
Cl2 - 20 sccm
Pressure:
30 mTorr
Power:
150 W
DC-bias:
200 V
Etch Rate:
1000 Å/min

STS ICP

Module 1: 2µm wide, 60µm depth bulk Si etch
 
Etch Cycle
Dep Cycle
Gases:
SF6 - 130 sccm
O2 - 13 sccm
C4F8 - 20 sccm (ramped @ -4 sccm/min)
(11+0s)
C4F8 - 85 sccm
(8+0s)
Pressure:
24 - 22 mT
(75% Fixed APC)
10 - 12 mT
(75% Fixed APC)
Coil Power:
800 W
600 W
Platen Power:
12W, HF
--
Process Time:
43:23 (min:s)
Temperature:
Lid - 45°C
Platen - 20°C
He Back-cooling:
10 T

 

Module 1 Results
Etch Depth:
60µm
Etch Rate:
1.55µm/min
Profile Angle:
89.9°
Selectivity (Si:PR):
53:1
Uniformity across wafer:
±1.0%
Initial Mask Undercut:
364nm/edge
Sidewall roughness:
150nm
Uniformity btw wafers:
±1.0%

 

Module 2: 1µm wide, 10µm depth SOI etch
 
Etch Cycle
Dep Cycle
Gases:
SF6 - 130 sccm
O2 - 13 sccm
(7+0s)
C4F8 - 100 sccm
(5+0s)
Pressure:
20 mT
(Auto APC)
20 mT
(Auto APC)
Coil Power:
600 W
600 W
Platen Power:
14W, LF (5ms on)
--
Process Time:
6:30 (min:s) with 10% over-etch
Temperature:
Lid - 45°C
Platen - 20°C
He Back-cooling:
10 T

 

Module 2 Results
Etch Depth:
10µm
Etch Rate:
1.91µm/min
Profile Angle:
89.4°
Selectivity (Si:PR):
53:1
Uniformity across wafer:
±1.0%
Initial Mask Undercut:
163nm/edge
Sidewall roughness:
123nm
Notch width at oxide interface:
148nm/edge
Uniformity btw wafers:
±1.0%

 

Module 3: 5µm wide, 10µm depth SOI etch
 
Etch Cycle
Dep Cycle
Gases:
SF6 - 130 sccm
O2 - 13 sccm
(7.5+0s)
C4F8 - 100 sccm
(5+0s)
Pressure:
25 mT
(Auto APC)
25 mT
(Auto APC)
Coil Power:
600 W
600 W
Platen Power:
16W, LF (5ms on)
--
Process Time:
8:45 (min:s)
Temperature:
Lid - 45°C
Platen - 20°C
He Back-cooling:
10 T

 

Module 3 Results
Etch Depth:
10µm
Etch Rate:
1.67µm/min
Profile Angle:
90.1°
Selectivity (Si:PR):
39:1
Uniformity across wafer:
±1.2%
Initial Mask Undercut:
147nm/edge
Sidewall roughness:
188nm
Notch width at oxide interface:
143nm/edge
Uniformity btw wafers:
±2.7%

 

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