Gallium Arsenide/Aluminum Gallium Arsenide
Plasma-Therm RIE
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Feature Etch
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Temperature:
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25-40 °C
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Gases:
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Cl2 - 20 sccm BCl3 - 30 sccm
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Pressure:
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15 mTorr
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Power:
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150 W
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DC-bias:
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250 V
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Etch Rate:
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2000 Å/min
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Via Hole Etch
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Temperature:
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25-40 °C
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Gases:
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Cl2 - 10 sccm BCl3 - 40 sccm
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Pressure:
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20 mTorr
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Power:
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75 W
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DC-bias:
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150 V
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Etch Rate:
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8000 - 10000 Å/min
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