The Georgia Tech STS AOE ICP (Inductive Coupling Plasma) Pro tool is dedicated to etch both shallow and deep SiC materials from small pieces up to 4in wafer size.

Functions

• High aspect ratio etching with high etch rate and selectivity

Materials etched and acceptable masks

• Etched: SiO2, quartz, Pyrex, fused silica, Si3N4, bulk silicon
• Masks: Si, PR & Metals (Cr, Ti, Ni)

Component specifications

• 3000W 13.56MHz AE – Coil
• 1000W 13.56MHz ENI – Platen
• Backside Helium Cooling with Standard 8-pin clamp & lip seal

Gases

• C4F8, SF6, O2, H2, CF4, two open gas slots

Process Pressure

• 2-80mT

Substrate size

• small pieces - one 150mm wafer

Temperatures

• Platen -20°C to 120°C, Walls 100°C, Lid 120°C

Vendor Specified Capabilities

• 2.5µm isolated trenches on 8-10µm TEOS
• Etch rate greater than 2000Å/min SiO2, greater than 4:1 selectivity SiO2: PR, etch rate variability intra- and inter-wafer ±3%, sidewalls 85-90°

Actual capabilities when tool acquired

• 5µm features on 3-10µm SiO2
• Etch rate greater than 3000Å/min SiO2, greater than 7.5:1 selectivity SiO2:PR, etch rate variability intra- and inter-wafer ±2%, sidewalls 89-90°

Recent Service/Modifications

• Converted to 100mm w/ ceramic parts (from quartz)
• Custom rebuild of matching network because of archaic gas cap failure