IEN - Micro/Nano Fabrication Facility
Oxford Cryogenic ICP

Oxford Cryogenic ICP

The Oxford Cryogenic ICP (Inductively Coupled Plasma) etching (DRIE) produces high ion densities and hence fast etch rates, while allowing separate control of ion density and ion energy (giving a low damage capability). Wafer clamping and helium back-side cooling is the standard and provides excellent temperature control with the cryogenic to provide a wide temperature range (-150C to 400C). Only 4" wafers are allowed in this system.

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Tran-Vinh Nguyen
Process Equipment Engineer III

Institute for Electronics and Nanotechnology (IEN)
Georgia Institute of Technology
tran-vinh.nguyen@ien.gatech.edu
404-385-6678(Office)
Georgia Institute of Technology
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791 Atlantic Drive
Atlanta GA 30332-0269 
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